Infineon Technologies - IRHNA57163SE

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IRHNA57163SE by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRHNA57163SE
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Transistor Application: SWITCHING; Maximum Pulsed Drain Current (IDM): 300 A;
Datasheet IRHNA57163SE Datasheet
In Stock123
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 75 A
Maximum Pulsed Drain Current (IDM): 300 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 3
Maximum Power Dissipation (Abs): 300 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-CBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0135 ohm
Avalanche Energy Rating (EAS): 280 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 130 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 75 A
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Pricing (USD)

Qty. Unit Price Ext. Price
123 $500.000 $61,500.000

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