Infineon Technologies - IRHQ57110SCS

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IRHQ57110SCS by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRHQ57110SCS
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 12 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 4.6 A; Operating Mode: ENHANCEMENT MODE;
Datasheet IRHQ57110SCS Datasheet
In Stock12
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 12 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Drain Current (ID): 4.6 A
Maximum Drain Current (Abs) (ID): 4.6 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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