Infineon Technologies - IRLS4030TRL7PP

IRLS4030TRL7PP by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRLS4030TRL7PP
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 750 A; Transistor Element Material: SILICON;
Datasheet IRLS4030TRL7PP Datasheet
In Stock520
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 190 A
Maximum Pulsed Drain Current (IDM): 750 A
Surface Mount: YES
Terminal Finish: MATTE TIN OVER NICKEL
No. of Terminals: 6
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0039 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 320 mJ
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 100 V
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
520 - -

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