Infineon Technologies - ISC230N10NM6

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ISC230N10NM6 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number ISC230N10NM6
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Maximum Pulsed Drain Current (IDM): 124 A; Terminal Position: DUAL;
Datasheet ISC230N10NM6 Datasheet
In Stock731
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 31 A
Maximum Pulsed Drain Current (IDM): 124 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 48 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .023 ohm
Avalanche Energy Rating (EAS): 40 mJ
Maximum Feedback Capacitance (Crss): 9.8 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
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Pricing (USD)

Qty. Unit Price Ext. Price
731 $1.078 $788.018

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