JANSF2N7467U2A by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	JANSF2N7467U2A
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Transistor Application: SWITCHING; Package Shape: SQUARE;
Datasheet	JANSF2N7467U2A Datasheet
In Stock	649

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	160 ns
Maximum Drain Current (ID):	75 A
Maximum Pulsed Drain Current (IDM):	300 A
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	250 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	130 ns
JESD-30 Code:	S-CSSO-G2
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0035 ohm
Avalanche Energy Rating (EAS):	500 mJ
Maximum Feedback Capacitance (Crss):	150 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	30 V
Reference Standard:	MIL-19500; MIL-STD-750; RH - 300K Rad(Si)

Pricing (USD)

Qty.	Unit Price	Ext. Price
649	-	-

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