Infineon Technologies - JANTXVR2N7492T2

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JANTXVR2N7492T2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANTXVR2N7492T2
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Package Style (Meter): CYLINDRICAL; Case Connection: DRAIN;
Datasheet JANTXVR2N7492T2 Datasheet
In Stock824
NAME DESCRIPTION
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 2.5 A
JEDEC-95 Code: TO-205AF
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 500 V
Qualification: Qualified
Maximum Power Dissipation (Abs): 25 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Reference Standard: MIL-19500/675B
Maximum Drain Current (Abs) (ID): 12 A
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 1.77 ohm
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