Infineon Technologies - JANTXVR2N7494U5

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JANTXVR2N7494U5 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANTXVR2N7494U5
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Finish: TIN LEAD;
Datasheet JANTXVR2N7494U5 Datasheet
In Stock723
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 12 A
Maximum Pulsed Drain Current (IDM): 48 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 15
Maximum Power Dissipation (Abs): 25 W
Terminal Position: QUAD
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-CQCC-N15
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Avalanche Energy Rating (EAS): 350 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 30 V
Qualification: Qualified
Additional Features: RADIATION HARDENED
Reference Standard: MIL-19500/700
Maximum Drain Current (Abs) (ID): 12 A
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