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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | JANTXVR2N7500U5 |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Qualification: Qualified; Maximum Drain Current (ID): 9 A; |
Datasheet | JANTXVR2N7500U5 Datasheet |
In Stock | 252 |
NAME | DESCRIPTION |
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Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 9 A |
Maximum Pulsed Drain Current (IDM): | 36 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | YES |
Terminal Finish: | TIN LEAD |
No. of Terminals: | 15 |
Maximum Power Dissipation (Abs): | 25 W |
Terminal Position: | BOTTOM |
Package Style (Meter): | CHIP CARRIER |
JESD-30 Code: | S-CBCC-N15 |
No. of Elements: | 1 |
Package Shape: | SQUARE |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Avalanche Energy Rating (EAS): | 56 mJ |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e0 |
Minimum DS Breakdown Voltage: | 130 V |
Qualification: | Qualified |
Additional Features: | RADIATION HARDENED |
Reference Standard: | MIL-19500/707 |
Maximum Drain Current (Abs) (ID): | 9 A |