Infineon Technologies - OM45L120SB

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OM45L120SB by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number OM45L120SB
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 70 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum VCEsat: 3 V; Maximum Operating Temperature: 150 Cel;
Datasheet OM45L120SB Datasheet
In Stock255
NAME DESCRIPTION
Maximum Collector Current (IC): 70 A
Maximum Power Dissipation (Abs): 250 W
Maximum Collector-Emitter Voltage: 1200 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 3 V
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