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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | PID1609 |
| Description | N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): IN-LINE; Peak Reflow Temperature (C): 260; Maximum Drain-Source On Resistance: .28 ohm; |
| In Stock | 952 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 40 |
| Configuration: | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 4 A |
| Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
| Surface Mount: | NO |
| No. of Terminals: | 12 |
| Minimum DS Breakdown Voltage: | 60 V |
| Qualification: | Not Qualified |
| Terminal Position: | SINGLE |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-PSIP-T12 |
| No. of Elements: | 4 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Peak Reflow Temperature (C): | 260 |
| Maximum Drain-Source On Resistance: | .28 ohm |









