Infineon Technologies - PTAB182002FCV1

  1. Home
  2. Infineon Technologies - PTAB182002FCV1
PTAB182002FCV1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTAB182002FCV1
Description RF Power Field-Effect Transistors;
Datasheet PTAB182002FCV1 Datasheet
In Stock337
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
337 - -

Popular Products

Category Top Products

BLF6G20-75 by NXP Semiconductors

BLF6G20-75

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; No. of Elements: 1; Transistor Element Material: SILICON;
934064591112 by NXP Semiconductors

934064591112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Maximum Drain Current (ID): 28 A;
MRF9180 by Motorola

MRF9180

Motorola

MRF9180 by Motorola is an N-CHANNEL RF Power FET with 2 elements, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a CERAMIC, METAL-SEALED COFIRED package and operates in ENHANCEMENT MODE up to 200 °C, with a max power dissipation of 388 W.
A5G26S008NT6 by NXP Semiconductors

A5G26S008NT6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;
AFT27S006NT1 by NXP Semiconductors

AFT27S006NT1

NXP Semiconductors

NXP Semiconductors' AFT27S006NT1 is a single N-channel RF Power FET with 21 dB min power gain, operating in the ultra-high frequency band. This enhancement mode transistor has a max power dissipation of 1.5W and operates b/w -40 to 150°C. It is commonly used in applications requiring high-frequency signal amplification and transmission.
FLL57MK by Eudyna Devices

FLL57MK

Eudyna Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Highest Frequency Band: L BAND; Operating Mode: DEPLETION MODE;
AFT09S200W02SR3 by NXP Semiconductors

AFT09S200W02SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
CLF1G0035-50,112 by Ampleon Netherlands B V

CLF1G0035-50,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Transistor Element Material: GALLIUM NITRIDE; Terminal Form: FLAT;
PD57006 by STMicroelectronics

PD57006

STMicroelectronics

PD57006 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
TSD2903 by STMicroelectronics

TSD2903

STMicroelectronics

TSD2903 by STMicroelectronics is an N-CHANNEL RF Power FET with a 60V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, with a max Drain Current of 3.9A, making it ideal for amplifier applications in enhancement mode.
STAC1011-500 by STMicroelectronics

STAC1011-500

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
D2225UK by Tt Electronics Plc

D2225UK

Tt Electronics Plc

D2225UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 2 elements in a COMMON SOURCE configuration. It operates in the ULTRA HIGH FREQUENCY BAND, with a max ID of 4A and VDS of 40V. Ideal for AMPLIFIER applications, this transistor has GULL WING terminals and can withstand up to 200°C operating temperature.
CLF1G0035-50 by NXP Semiconductors

CLF1G0035-50

NXP Semiconductors

The NXP Semiconductors CLF1G0035-50 is an RF Power FET with a min DS Breakdown Voltage of 150V, operating in the S Band. It features Gallium Nitride technology, DEPLETION MODE, and is suitable for AMPLIFIER applications. The package style is FLANGE MOUNT with CERAMIC/METAL-SEALED COFIRED body material.
FLL57MK by Fujitsu Semiconductor America

FLL57MK

Fujitsu Semiconductor America

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 15 V; No. of Elements: 1; Operating Mode: DEPLETION MODE;
TGF4230-EPU by Texas Instruments

TGF4230-EPU

Texas Instruments

TGF4230-EPU by Texas Instruments is an N-CHANNEL RF Power FET for X BAND applications. Features HETERO-JUNCTION tech with GALLIUM ARSENIDE material. Surface mount, 4 terminals, RECTANGULAR package ideal for high-frequency circuit designs.
BLF6G27-10G by Ampleon Netherlands B V

BLF6G27-10G

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDSO-G2; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Form: GULL WING;
A2T18H100-25SR3 by NXP Semiconductors

A2T18H100-25SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
AFM906NT1 by NXP Semiconductors

AFM906NT1

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;
934061525112 by NXP Semiconductors

934061525112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 33 A; Package Shape: RECTANGULAR; Terminal Position: DUAL;
934064584112 by NXP Semiconductors

934064584112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;