Infineon Technologies - PTF080101M

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PTF080101M by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number PTF080101M
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 18.8 W; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;
Datasheet PTF080101M Datasheet
In Stock998
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Sub-Category: FET General Purpose Powers
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 10
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 18.8 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G10
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
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