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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | PTFA091201FV4 |
| Description | N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 427 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE; |
| Datasheet | PTFA091201FV4 Datasheet |
| In Stock | 639 |
| NAME | DESCRIPTION |
|---|---|
| Maximum Power Dissipation (Abs): | 427 W |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 200 Cel |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |









