Infineon Technologies - PTFA092213FL-250W

  1. Home
  2. Infineon Technologies - PTFA092213FL-250W
PTFA092213FL-250W by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTFA092213FL-250W
Description RF Power Field-Effect Transistors;
Datasheet PTFA092213FL-250W Datasheet
In Stock895
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
895 - -

Popular Products

Category Top Products

PD57070S by STMicroelectronics

PD57070S

STMicroelectronics

PD57070S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact device ensures efficient performance in demanding environments.
AFT09H310-04GSR6 by NXP Semiconductors

AFT09H310-04GSR6

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; No. of Elements: 1;
934064687112 by NXP Semiconductors

934064687112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLATPACK; No. of Terminals: 6; Package Shape: SQUARE;
BLF888D by Ampleon Netherlands B V

BLF888D

Ampleon Netherlands B V

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
STAC1011-350 by STMicroelectronics

STAC1011-350

STMicroelectronics

STAC1011-350 by STMicroelectronics is a N-channel RF FET with 80V DS breakdown voltage. It operates in enhancement mode for L band applications, featuring a plastic/epoxy package and flat terminals. Ideal for amplifier circuits, this single configuration transistor is surface mountable with source connection in a rectangular flange mount package.
RF5L051K5CB4 by STMicroelectronics

RF5L051K5CB4

STMicroelectronics

RF Power Field-Effect Transistors;
BLP10H610Z by Ampleon Netherlands B V

BLP10H610Z

Ampleon Netherlands B V

BLP10H610Z by Ampleon Netherlands B V is an N-CHANNEL RF Power FET with a PLASTIC/EPOXY package. It operates in ENHANCEMENT MODE, suitable for AMPLIFIER applications in L BAND frequencies. With 104V DS Breakdown Voltage and max temp of 150°C, it features a COMMON SOURCE configuration and METAL-OXIDE SEMICONDUCTOR technology.
LET21004 by STMicroelectronics

LET21004

STMicroelectronics

LET21004 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 65V breakdown voltage, operates at frequencies in the S band, and supports a max drain current of 1A. Ideal for compact surface mount designs, it excels in high-temperature environments.
MRF6522-70 by New Jersey Semiconductor Products

MRF6522-70

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
BLF147 by Ampleon Netherlands B V

BLF147

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 65 V; Terminal Form: FLAT;
PD55003STR-E by STMicroelectronics

PD55003STR-E

STMicroelectronics

STMicroelectronics PD55003STR-E is a N-CHANNEL RF FET with 40V DS breakdown voltage, suitable for amplifier applications in the UHF band. It has a max drain current of 2.5A and operates in enhancement mode, offering high power dissipation up to 31.7W in a small outline package.
PTFA080551EV4R250XTMA1 by Infineon Technologies

PTFA080551EV4R250XTMA1

Infineon Technologies

PTFA080551EV4R250XTMA1 by Infineon is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 18dB Power Gain. It operates in the Ultra High Frequency Band, ideal for amplifier applications. The transistor features a ceramic-metal package, flat terminals, and can withstand temperatures up to 200°C.
PD60030S by STMicroelectronics

PD60030S

STMicroelectronics

PD60030S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 65V breakdown voltage, operates in enhancement mode, and supports L-band frequencies. Its compact surface mount design ensures efficient performance in various electronic devices.
A5G23H110NT4 by NXP Semiconductors

A5G23H110NT4

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
PD55035S by STMicroelectronics

PD55035S

STMicroelectronics

PD55035S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 8.5 A, operates at ultra-high frequencies, and withstands up to 165 °C. Ideal for compact surface mount designs in demanding environments.
BLF6G13L-250P by NXP Semiconductors

BLF6G13L-250P

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Qualification: Not Qualified; Case Connection: SOURCE;
AFT20P060-4NR3 by NXP Semiconductors

AFT20P060-4NR3

NXP Semiconductors

NXP Semiconductors' AFT20P060-4NR3 is an N-CHANNEL RF Power FET with a max operating temperature of 225°C. It features METAL-OXIDE SEMICONDUCTOR technology and a SINGLE configuration, making it ideal for high-power RF applications in various industries.
BLF246 by NXP Semiconductors

BLF246

NXP Semiconductors

The NXP Semiconductors BLF246 is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage and 16dB Power Gain, ideal for AMPLIFIER applications in the VERY HIGH FREQUENCY BAND. Featuring a max Drain Current of 13A and a power dissipation of 130W, this METAL-OXIDE SEMICONDUCTOR device operates in ENHANCEMENT MODE at up to 200°C.
MMRF5014HR5 by Freescale Semiconductor

MMRF5014HR5

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 17 dB; Transistor Application: AMPLIFIER; Package Style (Meter): FLANGE MOUNT;
MRFE6VP6300HR5 by Freescale Semiconductor

MRFE6VP6300HR5

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;