Infineon Technologies - PTFA181001F

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PTFA181001F by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number PTFA181001F
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 407 W; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 2;
Datasheet PTFA181001F Datasheet
In Stock99
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: GOLD
No. of Terminals: 2
Maximum Power Dissipation (Abs): 407 W
Terminal Position: DUAL
Package Style (Meter): FLATPACK
JESD-30 Code: R-CDFP-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: L BAND
Maximum Operating Temperature: 200 Cel
Case Connection: SOURCE
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY
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