Infineon Technologies - PTFA260851E

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PTFA260851E by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number PTFA260851E
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 437.5 W; Highest Frequency Band: S BAND; No. of Terminals: 2;
Datasheet PTFA260851E Datasheet
In Stock604
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: GOLD
JESD-609 Code: e4
No. of Terminals: 2
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 437.5 W
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: S BAND
Maximum Operating Temperature: 200 Cel
Case Connection: SOURCE
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