Infineon Technologies - PTFA261301F

PTFA261301F by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number PTFA261301F
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 449 W; Transistor Element Material: SILICON; No. of Terminals: 2;
Datasheet PTFA261301F Datasheet
In Stock140
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: GOLD
No. of Terminals: 2
Maximum Power Dissipation (Abs): 449 W
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: S BAND
Maximum Operating Temperature: 200 Cel
Case Connection: SOURCE
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY
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Pricing (USD)

Qty. Unit Price Ext. Price
140 - -

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