Infineon Technologies - PTFB092707FHV1XWSA1

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PTFB092707FHV1XWSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number PTFB092707FHV1XWSA1
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; JESD-30 Code: R-CQFP-X4; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet PTFB092707FHV1XWSA1 Datasheet
In Stock886
NAME DESCRIPTION
Minimum Power Gain (Gp): 18 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 65 V
Terminal Position: QUAD
Package Style (Meter): FLATPACK
JESD-30 Code: R-CQFP-X4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 200 Cel
Case Connection: SOURCE
Peak Reflow Temperature (C): NOT SPECIFIED
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