Infineon Technologies - PTFB093608FVV1XWSA1

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PTFB093608FVV1XWSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number PTFB093608FVV1XWSA1
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet PTFB093608FVV1XWSA1 Datasheet
In Stock76
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMMON SOURCE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 65 V
Terminal Position: QUAD
Package Style (Meter): FLATPACK
JESD-30 Code: R-CQFP-X6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Additional Features: HIGH RELIABILITY
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Case Connection: SOURCE
Peak Reflow Temperature (C): NOT SPECIFIED
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