Infineon Technologies - PTFB211501FV1

  1. Home
  2. Infineon Technologies - PTFB211501FV1
PTFB211501FV1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTFB211501FV1
Description RF Power Field-Effect Transistors;
Datasheet PTFB211501FV1 Datasheet
In Stock975
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
975 - -

Popular Products

Category Top Products

PD57070STR-E by STMicroelectronics

PD57070STR-E

STMicroelectronics

PD57070STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact device supports surface mount technology with a max power dissipation of 95 W.
PTVA101K02EVP1 by Infineon Technologies

PTVA101K02EVP1

Infineon Technologies

Infineon's PTVA101K02EVP1 is an N-CHANNEL RF Power FET with 105V DS Breakdown Voltage, suitable for L BAND applications. It features COMMON SOURCE configuration, METAL-OXIDE SEMICONDUCTOR tech, and operates in ENHANCEMENT MODE. This FLANGE MOUNT transistor has a max temp of 200°C and is ideal for AMPLIFIER use.
MRFE6VP5150GNR1 by NXP Semiconductors

MRFE6VP5150GNR1

NXP Semiconductors

NXP Semiconductors' MRFE6VP5150GNR1 is an N-CHANNEL RF Power FET with 133V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a COMMON SOURCE configuration for AMPLIFIER applications. The transistor has a PLASTIC/EPOXY package and GULL WING terminals, suitable for surface mount assembly.
RF5L15120CB4 by STMicroelectronics

RF5L15120CB4

STMicroelectronics

RF Power Field-Effect Transistors;
934064627112 by NXP Semiconductors

934064627112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 28 A; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
PD84010TR-E by STMicroelectronics

PD84010TR-E

STMicroelectronics

PD84010TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 95 W.
AFM912NT1 by NXP Semiconductors

AFM912NT1

NXP Semiconductors

RF Power Field-Effect Transistors;
A2T21H410-24SR6 by NXP Semiconductors

A2T21H410-24SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
MRF136 by Tyco Electronics M/a-com

MRF136

Tyco Electronics M/a-com

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-CRFM-F4; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Elements: 1;
MRF151 by M/a-com Technology Solutions

MRF151

M/a-com Technology Solutions

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; No. of Terminals: 4; Maximum Drain Current (Abs) (ID): 16 A;
MRF8P20165WHSR5 by Freescale Semiconductor

MRF8P20165WHSR5

Freescale Semiconductor

MRF8P20165WHSR5 by Freescale is an N-CHANNEL RF Power FET with 2 elements in a COMMON SOURCE configuration. It operates in the S BAND, has a 65V DS Breakdown Voltage, and can be used as an AMPLIFIER. The package is RECTANGULAR, made of CERAMIC/METAL, and supports surface mount technology.
MRF137 by M/a-com Technology Solutions

MRF137

M/a-com Technology Solutions

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
STAP1011-180 by STMicroelectronics

STAP1011-180

STMicroelectronics

STAP1011-180 by STMicroelectronics is an N-channel RF power FET designed for high-frequency applications in the L band. It features a max power dissipation of 800 W, a breakdown voltage of 65 V, and operates at temperatures up to 165 °C. Ideal for enhancing performance in various electronic devices.
934061038112 by NXP Semiconductors

934061038112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLATPACK; Terminal Position: DUAL; No. of Terminals: 2;
STAP85025 by STMicroelectronics

STAP85025

STMicroelectronics

STAP85025 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 79 W.
934064628118 by NXP Semiconductors

934064628118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Application: AMPLIFIER; JESD-30 Code: R-CDFP-F2;
TIM1314-30L by Toshiba

TIM1314-30L

Toshiba

The Toshiba TIM1314-30L is an N-channel RF Power FET with a ceramic/metal-sealed co-fired package. It operates in depletion mode, suitable for amplifier applications in the Ku band. With a max drain current of 20A and power dissipation of 136W, it offers high performance in a flange mount package.
AFT05MP075GNR1 by NXP Semiconductors

AFT05MP075GNR1

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 690 W; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40;
934056522112 by NXP Semiconductors

934056522112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Maximum Drain Current (ID): 12 A; Package Shape: RECTANGULAR;
PTVA101K02EVV1XWSA1 by Wolfspeed

PTVA101K02EVV1XWSA1

Wolfspeed

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Package Style (Meter): FLANGE MOUNT; Highest Frequency Band: L BAND;