Infineon Technologies - PTVA042502ECV1

  1. Home
  2. Infineon Technologies - PTVA042502ECV1
PTVA042502ECV1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTVA042502ECV1
Description RF Power Field-Effect Transistors;
Datasheet PTVA042502ECV1 Datasheet
In Stock353
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
353 - -

Popular Products

Category Top Products

935439205515 by NXP Semiconductors

935439205515

NXP Semiconductors

RF Power Field-Effect Transistors;
MRF6522-70 by New Jersey Semiconductor Products

MRF6522-70

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
SD57030 by STMicroelectronics

SD57030

STMicroelectronics

SD57030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max temp of 200 °C.
A2T18S165-12SR3 by NXP Semiconductors

A2T18S165-12SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
A5G35S004N-3400 by NXP Semiconductors

A5G35S004N-3400

NXP Semiconductors

RF Power Field-Effect Transistors;
PD85015S-E by STMicroelectronics

PD85015S-E

STMicroelectronics

PD85015S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 59 W.
PD55035STR-E by STMicroelectronics

PD55035STR-E

STMicroelectronics

STMicroelectronics PD55035STR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, suitable for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 7A Drain Current and 95W Power Dissipation. Ideal for high-power RF amplification needs.
BLF6G15L-40BRN by NXP Semiconductors

BLF6G15L-40BRN

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: QUAD; Transistor Application: AMPLIFIER;
A3T21H360W23SR6 by NXP Semiconductors

A3T21H360W23SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
PD57045STR-E by STMicroelectronics

PD57045STR-E

STMicroelectronics

PD57045STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface-mount transistor ensures efficient performance with a max power dissipation of 73 W.
PD55025TR-E by STMicroelectronics

PD55025TR-E

STMicroelectronics

STMicroelectronics PD55025TR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage. It operates in ULTRA HIGH FREQUENCY BAND, ideal for AMPLIFIER applications. With 7A ID and 165°C Max Temp, it's a SINGLE configuration transistor suitable for surface mount in small outline packages.
MRF6V2150NR1 by NXP Semiconductors

MRF6V2150NR1

NXP Semiconductors

NXP Semiconductors' MRF6V2150NR1 is a single N-channel RF Power FET for amplifier applications. Operating in enhancement mode, it offers a max temperature of 225°C and operates in the ultra-high frequency band. With a plastic/epoxy package body material, it features a rectangular shape and flat terminal form for surface mount applications.
SD2932 by STMicroelectronics

SD2932

STMicroelectronics

SD2932 by STMicroelectronics is an N-CHANNEL RF Power FET with a max drain current of 40A and power dissipation of 500W. It operates in the ultra-high frequency band, making it ideal for high-power applications like amplifiers and transmitters. The transistor features a metal-oxide semiconductor technology and can withstand temperatures up to 200°C.
A5G26S004NT6 by NXP Semiconductors

A5G26S004NT6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
934065607118 by NXP Semiconductors

934065607118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; No. of Elements: 1; Terminal Form: FLAT;
AFT05MP075NR1 by Freescale Semiconductor

AFT05MP075NR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 690 W; Terminal Finish: Matte Tin (Sn); Maximum Operating Temperature: 225 Cel;
BLF888D by Ampleon Netherlands B V

BLF888D

Ampleon Netherlands B V

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
AFT05MS004NT1 by Freescale Semiconductor

AFT05MS004NT1

Freescale Semiconductor

RF Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;
MRF137 by Motorola

MRF137

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Finish: Tin/Lead (Sn/Pb);
SD2921-10 by STMicroelectronics

SD2921-10

STMicroelectronics

SD2921-10 by STMicroelectronics is an N-channel RF Power FET with 125V DS breakdown voltage and 20A max drain current. Ideal for UHF band applications, it operates in enhancement mode with a max power dissipation of 389W.