PTVA123501FCV1R0XTMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	PTVA123501FCV1R0XTMA1
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Operating Temperature: 225 Cel; Package Style (Meter): FLATPACK;
Datasheet	PTVA123501FCV1R0XTMA1 Datasheet
In Stock	684

NAME	DESCRIPTION
Minimum Power Gain (Gp):	16.5 dB
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	2
Minimum DS Breakdown Voltage:	105 V
Terminal Position:	DUAL
Package Style (Meter):	FLATPACK
JESD-30 Code:	R-CDFP-F2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	L BAND
Maximum Operating Temperature:	225 Cel
Case Connection:	SOURCE
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
684	-	-

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;