Infineon Technologies - Q67050-A4013-A001

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Q67050-A4013-A001 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number Q67050-A4013-A001
Description N-Channel; Minimum Operating Temperature: -55 Cel; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum VCEsat: 2.5 V; Transistor Element Material: SILICON; Maximum Gate-Emitter Voltage: 20 V;
Datasheet Q67050-A4013-A001 Datasheet
In Stock780
NAME DESCRIPTION
Nominal Turn Off Time (toff): 326 ns
Maximum Collector-Emitter Voltage: 600 V
Nominal Turn On Time (ton): 229 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Maximum VCEsat: 2.5 V
Minimum Operating Temperature: -55 Cel
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