Infineon Technologies - Q67050-A4181-A002

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Q67050-A4181-A002 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number Q67050-A4181-A002
Description N-Channel; Transistor Element Material: SILICON; Nominal Turn On Time (ton): 133 ns; Maximum Gate-Emitter Threshold Voltage: 5 V; Maximum Gate-Emitter Voltage: 20 V; Maximum VCEsat: 2.5 V;
Datasheet Q67050-A4181-A002 Datasheet
In Stock775
NAME DESCRIPTION
Nominal Turn Off Time (toff): 644 ns
Maximum Collector-Emitter Voltage: 600 V
Nominal Turn On Time (ton): 133 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Maximum VCEsat: 2.5 V
Minimum Operating Temperature: -55 Cel
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