Infineon Technologies - Q67050-A4220-A101

  1. Home
  2. Infineon Technologies - Q67050-A4220-A101
Q67050-A4220-A101 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number Q67050-A4220-A101
Description N-Channel; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 150 Cel; Maximum VCEsat: 3.15 V; Transistor Element Material: SILICON; Maximum Gate-Emitter Threshold Voltage: 5 V;
Datasheet Q67050-A4220-A101 Datasheet
In Stock327
NAME DESCRIPTION
Nominal Turn Off Time (toff): 122 ns
Maximum Collector-Emitter Voltage: 600 V
Nominal Turn On Time (ton): 11 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Maximum VCEsat: 3.15 V
Minimum Operating Temperature: -55 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
327 - -

Popular Products

Category Top Products

IRG7PH42U-EP by International Rectifier

IRG7PH42U-EP

International Rectifier

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 385 W; Maximum Collector Current (IC): 90 A; Maximum Gate-Emitter Threshold Voltage: 6 V; Terminal Finish: MATTE TIN OVER NICKEL;
IGW50N60TXK by Infineon Technologies

IGW50N60TXK

Infineon Technologies

IGW50N60TXK by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals, suitable for high-power operations at up to 175°C.
SGB02N120ATMA1 by Infineon Technologies

SGB02N120ATMA1

Infineon Technologies

SGB02N120ATMA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 6.2A. It has a nominal turn-off time of 375ns, making it suitable for power control applications requiring fast switching speeds. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.
IKD04N60RFBTMA1 by Infineon Technologies

IKD04N60RFBTMA1

Infineon Technologies

IKD04N60RFBTMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 8A max collector current, and 216ns turn-off time. Ideal for power control applications due to its 75W max power dissipation, small outline package style, and built-in diode configuration.
IGW40N120H3FKSA1 by Infineon Technologies

IGW40N120H3FKSA1

Infineon Technologies

IGW40N120H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 414ns nominal turn off time. Ideal for power control applications, this transistor features a single configuration in a rectangular package with through-hole terminals.
IKW50N60TAFKSA1 by Infineon Technologies

IKW50N60TAFKSA1

Infineon Technologies

IKW50N60TAFKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 396ns toff. Ideal for power control applications, it features a built-in diode, AEC-Q101 compliance, and through-hole terminals in a rectangular package.
FF1000R17IE4BOSA1 by Infineon Technologies

FF1000R17IE4BOSA1

Infineon Technologies

FF1000R17IE4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max Collector-Emitter Voltage of 1700V and a Nominal Turn Off Time of 1890ns, making it ideal for POWER CONTROL applications. The transistor features a Max Collector Current of 1390A and operates at temperatures up to 175°C in a FLANGE MOUNT package style.
APTGLQ100DA120T1G by Microchip Technology

APTGLQ100DA120T1G

Microchip Technology

Microchip Technology's APTGLQ100DA120T1G is an N-CHANNEL IGBT with 1200V VCEsat, 414ns toff, and 520W power dissipation. Ideal for MOTOR CONTROL applications due to its built-in diode and thermistor. Operating temperature range from -40°C to 175°C ensures reliable performance in various environments.
FP100R12KT4B11BOSA1 by Infineon Technologies

FP100R12KT4B11BOSA1

Infineon Technologies

Infineon's FP100R12KT4B11BOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 620ns turn-off time, and 210ns turn-on time. Its complex configuration and isolated case connection make it ideal for high-power applications in industries like automotive and renewable energy.
IXXX100N60B3H1 by Littelfuse

IXXX100N60B3H1

Littelfuse

IXXX100N60B3H1 by Littelfuse is an N-CHANNEL IGBT with a max VCEsat of 1.8V and a collector current of 200A. Ideal for power control applications, it has a built-in diode, operates at temperatures up to 150°C, and features a turn-off time of 350ns.
AUIRGDC0250 by Infineon Technologies

AUIRGDC0250

Infineon Technologies

AUIRGDC0250 by Infineon Technologies is an N-CHANNEL IGBT with a max fall time of 1371 ns, power dissipation of 543 W, and max operating temp of 150°C. It's ideal for high-power applications requiring a collector-emitter voltage up to 1200 V and collector current up to 141 A.
IGW25T120FKSA1 by Infineon Technologies

IGW25T120FKSA1

Infineon Technologies

IGW25T120FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, ideal for power control applications. Featuring a 50A max collector current and 790ns turn off time, it operates at up to 150°C. This single configuration transistor has a through-hole terminal form in a rectangular package style.
STGP6NC60HD by STMicroelectronics

STGP6NC60HD

STMicroelectronics

STGP6NC60HD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 15A max collector current, and 56W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 222ns. Package style is flange mount with through-hole terminals.
IXXH75N60C3D1 by IXYS Corporation

IXXH75N60C3D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 150 A; Package Body Material: PLASTIC/EPOXY;
FGY75T120SWD by Onsemi

FGY75T120SWD

Onsemi

Insulated Gate Bipolar Transistors;
IXA70I1200NA by Littelfuse

IXA70I1200NA

Littelfuse

IXA70I1200NA by Littelfuse is an N-CHANNEL IGBT with 1200V VCEsat, 100A IC, and 350W power dissipation. Ideal for power control applications, it features a fast turn-off time of 350ns and operates b/w -40 to 150°C.
HGT1S10N120BNS by Onsemi

HGT1S10N120BNS

Onsemi

HGT1S10N120BNS by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 4.2V and a max collector-emitter voltage of 1200V. It is designed for motor control applications, featuring a rise time of 15ns and a power dissipation of 298W.
FGH40N60UFDTU by Onsemi

FGH40N60UFDTU

Onsemi

FGH40N60UFDTU by Onsemi is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 290W Ptot. Ideal for power control applications due to its fast tf of 100ns and toff of 190ns. The package style is flange mount with a max operating temperature of 150°C.
FS75R12KT3BOSA1 by Infineon Technologies

FS75R12KT3BOSA1

Infineon Technologies

Infineon FS75R12KT3BOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 105A, and turn-off time of 610ns. Ideal for applications requiring high power efficiency in industrial systems like motor drives and renewable energy converters.
FF300R12KT4HOSA1 by Infineon Technologies

FF300R12KT4HOSA1

Infineon Technologies

FF300R12KT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a max voltage of 1200V, and a max current of 450A. It has a nominal turn-off time of 720ns and turn-on time of 230ns. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.