Infineon Technologies - RGR3B60KD2TRLPBF

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1630 W; Maximum Collector Current (IC): 380 A; Maximum Collector-Emitter Voltage: 600 V;

STGB3NC120HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 1200V VCE, 14A IC, and 680ns toff. Ideal for power control applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount assembly.

DF1000R17IE4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 1390A max collector current, and 1890ns turn off time. Ideal for power control applications due to its single configuration with built-in diode and thermistor, rectangular package shape, and flange mount style. Operating at a max temperature of 175°C, it offers efficient performance in high-power systems.

HGTG10N120BND by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 35A max collector current. Ideal for motor control applications, it features a single configuration with built-in diode and a nominal turn off time of 330ns. Package style: Flange mount, terminal finish: Matte Tin, operating temp: 150°C.

Infineon FS75R12KS4BOSA1 is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. Features include 1200V max collector-emitter voltage, 100A max collector current, and 390ns turn off time. Ideal for high-power applications requiring fast switching such as motor drives and inverters.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 75 A; Nominal Turn Off Time (toff): 161 ns;

FGH40N65UFDTU by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 80A IC, and 290W power dissipation. Ideal for power control applications, it features a built-in diode, 152ns turn-off time, and operates b/w -55 to 150°C.

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 385 W; Maximum Collector Current (IC): 90 A; Maximum Gate-Emitter Threshold Voltage: 6 V; Terminal Finish: MATTE TIN OVER NICKEL;

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 75 A; Package Shape: RECTANGULAR;

ISL9V3040P3 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.6V, ideal for AUTOMOTIVE IGNITION applications. It has a Max Collector-Emitter Voltage of 450V and can handle a Max Collector Current of 21A. This IGBT comes in a RECTANGULAR package style with THROUGH-HOLE terminals.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 28 A; Terminal Finish: TIN SILVER COPPER;

FGH40N60SFDTU_F085 by Onsemi is an N-CHANNEL IGBT with 600V VCEsat, 80A IC, and 290W power dissipation. Ideal for power control applications, it features a built-in diode, 54ns fall time, and -55 to 150°C operating temperature range.

FGH40N60SFTU by Onsemi is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a nominal turn-off time of 150ns, making it suitable for power control applications requiring high-speed switching capabilities. With a max power dissipation of 290W and a max collector current of 80A, this transistor is ideal for applications where efficient power management is crucial.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 937 W; Maximum Collector Current (IC): 95 A; JESD-30 Code: R-PSSO-G2;

IRG4BC40WLPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 40A. It has a power dissipation of 160W, making it suitable for power control applications. With a turn-off time of 294ns and turn-on time of 48ns, it offers efficient performance in high-power systems.

IRG7PH42UD-EP by Infineon is an N-channel IGBT with 1200V max collector-emitter voltage and 85A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a max power dissipation of 320W and operating temperature of 150°C, it offers fast switching times of 41ns rise, 86ns fall, and 444ns turn-off.

IKY75N120CH3XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 150A max collector current. Ideal for power control applications, it has a single configuration with built-in diode and offers fast turn-off time of 468ns.

IRGP20B60PDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Collector Current of 40A. It is designed for POWER CONTROL applications, featuring a Nominal Turn Off Time of 138ns and Max Power Dissipation of 220W.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 54 A; JESD-30 Code: R-PSFM-T3;