Infineon Technologies - SGB15N60HSATMA2

  1. Home
  2. Infineon Technologies - SGB15N60HSATMA2
SGB15N60HSATMA2 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number SGB15N60HSATMA2
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 27 A; Terminal Position: SINGLE; Terminal Form: GULL WING;
Datasheet SGB15N60HSATMA2 Datasheet
In Stock285
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 27 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Nominal Turn Off Time (toff): 252 ns
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: SINGLE
Nominal Turn On Time (ton): 27 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
285 - -

Popular Products

Category Top Products

CM150TX-24S1 by Mitsubishi Electric

CM150TX-24S1

Mitsubishi Electric

Mitsubishi Electric's CM150TX-24S1 IGBT is an N-channel transistor with 6 elements, ideal for motor control applications. With a max VCEsat of 2.25V and IC of 150A, it offers efficient power dissipation up to 935W. Operating b/w -40°C to 150°C, it features fast rise/fall times (tr/tf) of 200/300ns for precise control.
FGH40N60UFDTU by Onsemi

FGH40N60UFDTU

Onsemi

FGH40N60UFDTU by Onsemi is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 290W Ptot. Ideal for power control applications due to its fast tf of 100ns and toff of 190ns. The package style is flange mount with a max operating temperature of 150°C.
IXGH32N170A by IXYS Corporation

IXGH32N170A

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 32 A; Transistor Element Material: SILICON; No. of Elements: 1;
IKW40N65ES5XKSA1 by Infineon Technologies

IKW40N65ES5XKSA1

Infineon Technologies

IKW40N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 79A max collector current. It has a single configuration with built-in diode, ideal for power control applications. The transistor features a nominal turn-off time of 204ns and nominal turn-on time of 36ns, suitable for high-speed switching operations.
IGA03N120H2XKSA1 by Infineon Technologies

IGA03N120H2XKSA1

Infineon Technologies

Infineon's IGA03N120H2XKSA1 is an N-Channel IGBT with 1200V VCE, 310ns toff, and 14.4ns ton. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.
IXGA20N120A3 by IXYS Corporation

IXGA20N120A3

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 40 A; Package Style (Meter): SMALL OUTLINE;
STGD3HF60HDT4 by STMicroelectronics

STGD3HF60HDT4

STMicroelectronics

STGD3HF60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 13A max collector current, and 38W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and small outline package style.
6MS24017P43W41646NOSA1 by Infineon Technologies

6MS24017P43W41646NOSA1

Infineon Technologies

6MS24017P43W41646NOSA1 by Infineon Technologies is an N-Channel IGBT with 12 elements. It has a max collector-emitter voltage of 1700V and operates b/w -25°C to 55°C. Ideal for power control applications, this surface-mount transistor features a silicon element in a rectangular package style.
FGPF10N60UNDF by Fairchild Semiconductor

FGPF10N60UNDF

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Maximum Collector Current (IC): 20 A; Maximum Fall Time (tf): 24.8 ns;
HGTG30N60A4D by Fairchild Semiconductor

HGTG30N60A4D

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 463 W; Maximum Collector Current (IC): 75 A; Maximum Gate-Emitter Threshold Voltage: 7 V;
FF300R12KT4HOSA1 by Infineon Technologies

FF300R12KT4HOSA1

Infineon Technologies

FF300R12KT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a max voltage of 1200V, and a max current of 450A. It has a nominal turn-off time of 720ns and turn-on time of 230ns. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.
STGB20N45LZAG by STMicroelectronics

STGB20N45LZAG

STMicroelectronics

STGB20N45LZAG by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 1.25V and a max collector-emitter voltage of 475V. It is designed for automotive ignition applications, has a small outline package style, and can operate at temperatures up to 175°C.
FGH40N60SMDF by Onsemi

FGH40N60SMDF

Onsemi

FGH40N60SMDF by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Collector Current of 80A. It has a power dissipation of 349W and is used for power control applications due to its fast rise time (28ns) and fall time (17ns).
APT100GN60B2G by Microsemi

APT100GN60B2G

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 229 A; Case Connection: COLLECTOR;
V23990-K230-F40-/0B/-PM by Vincotech

V23990-K230-F40-/0B/-PM

Vincotech

Vincotech V23990-K230-F40-/0B/-PM is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a max VCEsat of 2.2V and can handle up to 88A IC. Ideal for power control applications, this IGBT operates at temperatures up to 175°C with a collector-emitter voltage of 1200V.
FGD3040G2-F085 by Onsemi

FGD3040G2-F085

Onsemi

FGD3040G2-F085 by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 390V and Max Power Dissipation of 150W. It is designed for AUTOMOTIVE IGNITION applications, featuring a built-in diode and resistor in a surface-mount package style.
IXDH30N120D1 by Littelfuse

IXDH30N120D1

Littelfuse

IXDH30N120D1 by Littelfuse is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 60A max collector current, and 435W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 570ns.
IXYN82N120C3H1 by IXYS Corporation

IXYN82N120C3H1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 105 A; Terminal Form: UNSPECIFIED;
AUIRG4PH50S by International Rectifier

AUIRG4PH50S

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 57 A; Terminal Finish: MATTE TIN OVER NICKEL;
IKD06N60RAATMA2 by Infineon Technologies

IKD06N60RAATMA2

Infineon Technologies

IKD06N60RAATMA2 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 12A max collector current. It has a turn-off time of 335ns and turn-on time of 22ns, making it suitable for applications requiring fast switching such as motor drives and power supplies. AEC-Q101 certified, it comes in a small outline package with gull wing terminals for surface mount assembly.