Infineon Technologies - SIGC109T120R3EX1SA2

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SIGC109T120R3EX1SA2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC109T120R3EX1SA2
Description P-CHANNEL; Maximum Collector Current (IC): 100 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet SIGC109T120R3EX1SA2 Datasheet
In Stock565
NAME DESCRIPTION
Maximum Collector Current (IC): 100 A
Maximum Collector-Emitter Voltage: 1200 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: P-CHANNEL
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