Infineon Technologies - SIGC32T120R3L

SIGC32T120R3L by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC32T120R3L
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 25 A; JESD-30 Code: R-XUFM-X; Transistor Application: POWER CONTROL;
Datasheet SIGC32T120R3L Datasheet
In Stock269
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 25 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
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