Infineon Technologies - SIGC39T60EX1SA1

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SIGC39T60EX1SA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC39T60EX1SA1
Description N-CHANNEL; Maximum Collector Current (IC): 75 A; Maximum Collector-Emitter Voltage: 600 V; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel;
Datasheet SIGC39T60EX1SA1 Datasheet
In Stock380
NAME DESCRIPTION
Maximum Collector Current (IC): 75 A
Maximum Collector-Emitter Voltage: 600 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
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