Infineon Technologies - SIGC61T60NC

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SIGC61T60NC by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC61T60NC
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 75 A; No. of Terminals: 4; Maximum Collector-Emitter Voltage: 600 V;
Datasheet SIGC61T60NC Datasheet
In Stock205
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 75 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Nominal Turn Off Time (toff): 205 ns
No. of Terminals: 4
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 90 ns
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
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