Infineon Technologies - SP000852232

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SP000852232 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SP000852232
Description N-Channel; Maximum Power Dissipation (Abs): 170 W; Maximum Collector Current (IC): 40 A; Maximum Gate-Emitter Voltage: 20 V; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 600 V;
Datasheet SP000852232 Datasheet
In Stock837
NAME DESCRIPTION
Nominal Turn Off Time (toff): 241 ns
Maximum Collector Current (IC): 40 A
Maximum Power Dissipation (Abs): 170 W
Maximum Collector-Emitter Voltage: 600 V
Nominal Turn On Time (ton): 31 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 5.7 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Maximum VCEsat: 2.4 V
Minimum Operating Temperature: -40 Cel
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