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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | SP000884582 |
| Description | N-Channel; Maximum Power Dissipation (Abs): 145 W; Maximum Collector Current (IC): 30 A; Transistor Element Material: SILICON; Maximum VCEsat: 2.25 V; Maximum Gate-Emitter Threshold Voltage: 6.4 V; |
| Datasheet | SP000884582 Datasheet |
| In Stock | 801 |
| NAME | DESCRIPTION |
|---|---|
| Maximum Collector Current (IC): | 30 A |
| Transistor Element Material: | SILICON |
| Maximum Gate-Emitter Threshold Voltage: | 6.4 V |
| Polarity or Channel Type: | N-Channel |
| Minimum Operating Temperature: | -40 Cel |
| Nominal Turn Off Time (toff): | 540 ns |
| Maximum Power Dissipation (Abs): | 145 W |
| Maximum Collector-Emitter Voltage: | 1200 V |
| Nominal Turn On Time (ton): | 52 ns |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Gate-Emitter Voltage: | 20 V |
| Case Connection: | ISOLATED |
| Maximum VCEsat: | 2.25 V |









