Infineon Technologies - SPD06N80C3XT

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SPD06N80C3XT by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPD06N80C3XT
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY;
Datasheet SPD06N80C3XT Datasheet
In Stock555
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 6 A
Maximum Pulsed Drain Current (IDM): 18 A
Surface Mount: YES
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .9 ohm
Avalanche Energy Rating (EAS): 230 mJ
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 800 V
Additional Features: AVALANCHE RATED, HIGH VOLTAGE
Peak Reflow Temperature (C): NOT SPECIFIED
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