SPD09P06PLGBTMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	SPD09P06PLGBTMA1
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 9.7 A; JESD-609 Code: e3; Maximum Pulsed Drain Current (IDM): 38.8 A;
Datasheet	SPD09P06PLGBTMA1 Datasheet
In Stock	5,624

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	9.7 A
Maximum Pulsed Drain Current (IDM):	38.8 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.25 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	70 mJ
Other Names:	SPD09P06PLG SPD09P06PL GCT-ND SPD09P06PL G-ND SPD09P06PL GDKR-ND SPD09P06PL GCT SPD09P06PL G SPD09P06PL GTR-ND SPD09P06PL GDKR SP000443928 SPD09P06PLGBTMA1CT SPD09P06PLGBTMA1TR SPD09P06PLGBTMA1DKR
JEDEC-95 Code:	TO-252AB
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Pricing (USD)

Qty.	Unit Price	Ext. Price
5,624	-	-

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