Infineon Technologies - SPD15P10PLGBTMA1

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SPD15P10PLGBTMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPD15P10PLGBTMA1
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252AA; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 15 A;
Datasheet SPD15P10PLGBTMA1 Datasheet
In Stock68,467
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 15 A
Maximum Pulsed Drain Current (IDM): 60 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .2 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 230 mJ
Other Names: SPD15P10PLGBTMA1DKR
SPD15P10PLGBTMA1CT
SPD15P10PL GDKR
SP000317393
SPD15P10PL G
SPD15P10PL GCT
SPD15P10PLGBTMA1TR
SPD15P10PL G-ND
SPD15P10PL GTR-ND
SPD15P10PL GTR
SPD15P10PL GDKR-ND
SPD15P10PL GCT-ND
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
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