SPD18P06PGBT by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	SPD18P06PGBT
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; JEDEC-95 Code: TO-252AB; Minimum DS Breakdown Voltage: 60 V;
Datasheet	SPD18P06PGBT Datasheet
In Stock	2,069

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	150 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	18.6 A
JEDEC-95 Code:	TO-252AB
Maximum Pulsed Drain Current (IDM):	74.4 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
No. of Terminals:	2
Minimum DS Breakdown Voltage:	60 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	AVALANCHE RATED
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.13 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,069	-	-

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