Infineon Technologies - SPD18P06PGBT

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SPD18P06PGBT by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPD18P06PGBT
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; JEDEC-95 Code: TO-252AB; Minimum DS Breakdown Voltage: 60 V;
Datasheet SPD18P06PGBT Datasheet
In Stock2,069
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 150 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 18.6 A
JEDEC-95 Code: TO-252AB
Maximum Pulsed Drain Current (IDM): 74.4 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 60 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .13 ohm
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