Infineon Technologies - SPP08P06PHXKSA1

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SPP08P06PHXKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPP08P06PHXKSA1
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Terminal Finish: TIN;
Datasheet SPP08P06PHXKSA1 Datasheet
In Stock410
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 70 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 8.8 A
JEDEC-95 Code: TO-220AB
Maximum Pulsed Drain Current (IDM): 35.2 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: NO
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 3
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Maximum Drain-Source On Resistance: .3 ohm
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