Image shown is a representation only.
| Manufacturer | Littelfuse |
|---|---|
| Manufacturer's Part Number | IXBN75N170 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 145 A; Maximum Collector-Emitter Voltage: 1700 V; |
| Datasheet | IXBN75N170 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 145 A |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 5.5 V |
| Surface Mount: | NO |
| Nominal Turn Off Time (toff): | 840 ns |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 625 W |
| Terminal Position: | UPPER |
| Nominal Turn On Time (ton): | 277 ns |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PUFM-X4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Maximum Collector-Emitter Voltage: | 1700 V |
| Maximum Gate-Emitter Voltage: | 20 V |
| Reference Standard: | UL RECOGNIZED |
| Maximum VCEsat: | 3.1 V |
