Littelfuse - IXGR72N60C3D1

IXGR72N60C3D1 by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number IXGR72N60C3D1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 75 A; Maximum Operating Temperature: 150 Cel;
Datasheet IXGR72N60C3D1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 75 A
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 5.5 V
Surface Mount: NO
Terminal Finish: TIN SILVER COPPER
Nominal Turn Off Time (toff): 132 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 200 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 64 ns
Package Style (Meter): IN-LINE
Maximum Turn Off Time (toff): 240 ns
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Fall Time (tf): 110 ns
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e1
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): 260
Maximum VCEsat: 2.7 V
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