Littelfuse - IXGX55N120A3D1

  1. Home
  2. Littelfuse - IXGX55N120A3D1
IXGX55N120A3D1 by Littelfuse

Image shown is a representation only.

Manufacturer Littelfuse
Manufacturer's Part Number IXGX55N120A3D1
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 460 W; Maximum Collector Current (IC): 125 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Threshold Voltage: 5 V;
Datasheet IXGX55N120A3D1 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 125 A
Maximum Power Dissipation (Abs): 460 W
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Threshold Voltage: 5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

FGH40N60SMDF-F085 by Onsemi

FGH40N60SMDF-F085

Onsemi

FGH40N60SMDF-F085 by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.5V and IC of 80A. Ideal for POWER CONTROL applications, it has a toff of 123ns, tf of 20ns, and can handle up to 349W power dissipation. Operating b/w -55°C to 175°C, it features a max VCE of 600V and gate-emitter voltage of 20V.
IKW40N120H3 by Infineon Technologies

IKW40N120H3

Infineon Technologies

IKW40N120H3 by Infineon Technologies is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 483W Ptot. It features a built-in diode for power control applications. With a turn-off time of 414ns and turn-on time of 78ns, it operates at up to 175°C temperature.
AFGY100T65SPD by Onsemi

AFGY100T65SPD

Onsemi

AFGY100T65SPD by Onsemi is an N-CHANNEL IGBT with 650V VCEsat and 120A IC, ideal for POWER CONTROL applications. It features a max power dissipation of 882W, operating temperature range of -55 to 175°C, and built-in diode configuration.
IXXX100N60C3H1 by Littelfuse

IXXX100N60C3H1

Littelfuse

The Littelfuse IXXX100N60C3H1 is an N-CHANNEL IGBT with a max VCEsat of 2.2V and IC of 170A, ideal for POWER CONTROL applications. It has a package style of IN-LINE, operating temperature range from -55 to 150 °C, and a turn-off time of 220ns.
NXH450B100H4Q2F2PG by Onsemi

NXH450B100H4Q2F2PG

Onsemi

NXH450B100H4Q2F2PG by Onsemi is an N-CHANNEL IGBT with 3 BANKS, SERIES CONNECTED configuration. It has a Max VCEsat of 2.25V and a Nominal Turn Off Time of 224ns, making it ideal for POWER CONTROL applications. With a Max Collector-Emitter Voltage of 1000V and Max Power Dissipation of 234W, this IGBT operates in temperatures ranging from -40°C to 150°C.
FF450R12KE4HOSA1 by Infineon Technologies

FF450R12KE4HOSA1

Infineon Technologies

Infineon's FF450R12KE4HOSA1 IGBT features N-CHANNEL polarity, 2 elements with diode in series configuration. With VCEsat of 2.15V and IC of 520A, it suits high-power applications like motor drives and renewable energy systems. Operating at up to 150°C, it offers fast turn-off time (toff) of 800ns for efficient power control.
FP100R06KE3BOSA1 by Infineon Technologies

FP100R06KE3BOSA1

Infineon Technologies

FP100R06KE3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V. It has a nominal turn-off time of 820ns and a nominal turn-on time of 170ns. This IGBT is commonly used in applications requiring high power switching, such as motor drives and power supplies.
IRGB20B60PD1PBF by Infineon Technologies

IRGB20B60PD1PBF

Infineon Technologies

IRGB20B60PD1PBF by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 40A max collector current, and 215W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast rise time of 8ns. Suitable for use in high-power systems requiring efficient switching capabilities.
CM200DU-12NFH by Powerex

CM200DU-12NFH

Powerex

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; No. of Elements: 2; Package Body Material: UNSPECIFIED;
IKD06N60RAATMA2 by Infineon Technologies

IKD06N60RAATMA2

Infineon Technologies

IKD06N60RAATMA2 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 12A max collector current. It has a turn-off time of 335ns and turn-on time of 22ns, making it suitable for applications requiring fast switching such as motor drives and power supplies. AEC-Q101 certified, it comes in a small outline package with gull wing terminals for surface mount assembly.
AFGHL50T65SQDC by Onsemi

AFGHL50T65SQDC

Onsemi

AFGHL50T65SQDC by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 100A, and Ptot of 238W. Ideal for power control applications due to its fast turn-off time (toff) of 160.8ns and high operating temperature range (-55 to 175°C).
IRG4PF50WPBF by Infineon Technologies

IRG4PF50WPBF

Infineon Technologies

IRG4PF50WPBF by Infineon Technologies is an N-CHANNEL IGBT with 900V max collector-emitter voltage, 51A max collector current, and 200W max power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 370ns and low gate-emitter threshold voltage of 6V.
STGWA40M120DF3 by STMicroelectronics

STGWA40M120DF3

STMicroelectronics

STGWA40M120DF3 by STMicroelectronics is an N-CHANNEL IGBT with a max power dissipation of 468W. It operates at a max temperature of 175°C and has a collector-emitter voltage of 1200V. It is commonly used in high-power applications such as motor drives and inverters.
IKW25T120FKSA1 by Infineon Technologies

IKW25T120FKSA1

Infineon Technologies

IKW25T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 50A. It has a nominal turn-off time of 790ns and is designed for power control applications. The transistor comes in a rectangular package with through-hole terminals, making it suitable for high-power switching operations at temperatures up to 150°C.
IXGN200N170 by IXYS Corporation

IXGN200N170

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 280 A; No. of Terminals: 4;
APT50GP60JDQ2 by Advanced Power Technology

APT50GP60JDQ2

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Nominal Turn On Time (ton): 55 ns; Nominal Turn Off Time (toff): 200 ns;
APT75GP120JDQ3 by Microsemi

APT75GP120JDQ3

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 543 W; Maximum Collector Current (IC): 128 A; Maximum Collector-Emitter Voltage: 1200 V;
FF450R12KT4HOSA1 by Infineon Technologies

FF450R12KT4HOSA1

Infineon Technologies

Infineon Technologies' FF450R12KT4HOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, featuring 1200V max collector-emitter voltage and 580A max collector current. Ideal for high-power applications requiring fast switching speeds, such as industrial motor drives and renewable energy systems.
IXXX200N65B4 by IXYS Corporation

IXXX200N65B4

IXYS Corporation

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 1150 W; Maximum Collector Current (IC): 370 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Gate-Emitter Voltage: 20 V;
IRG4BC30FD1PBF by International Rectifier

IRG4BC30FD1PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Maximum Operating Temperature: 150 Cel;