Littelfuse - IXTD01N100D-1M

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IXTD01N100D-1M by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number IXTD01N100D-1M
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; No. of Elements: 1; Maximum Drain-Source On Resistance: 110 ohm; Peak Reflow Temperature (C): NOT SPECIFIED; Operating Mode: DEPLETION MODE;
Datasheet IXTD01N100D-1M Datasheet
NAME DESCRIPTION
Minimum DS Breakdown Voltage: 1000 V
Qualification: Not Qualified
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
No. of Elements: 1
Operating Mode: DEPLETION MODE
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Maximum Drain-Source On Resistance: 110 ohm
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