Littelfuse - IXTD69N30P-7S

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IXTD69N30P-7S by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number IXTD69N30P-7S
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain-Source On Resistance: .06 ohm;
Datasheet IXTD69N30P-7S Datasheet
NAME DESCRIPTION
Minimum DS Breakdown Voltage: 300 V
Qualification: Not Qualified
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Maximum Drain-Source On Resistance: .06 ohm
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