Littelfuse - IXTP60N10T

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IXTP60N10T by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number IXTP60N10T
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Maximum Pulsed Drain Current (IDM): 180 A; Package Style (Meter): FLANGE MOUNT;
Datasheet IXTP60N10T Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 60 A
Maximum Pulsed Drain Current (IDM): 180 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 176 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .018 ohm
Avalanche Energy Rating (EAS): 500 mJ
Maximum Feedback Capacitance (Crss): 60 pF
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Additional Features: AVALANCHE RATED, ULTRA LOW RESISTANCE
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