Littelfuse - MIXA100PM650TMI

  1. Home
  2. Littelfuse - MIXA100PM650TMI
MIXA100PM650TMI by Littelfuse

Image shown is a representation only.

Manufacturer Littelfuse
Manufacturer's Part Number MIXA100PM650TMI
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 330 W; Maximum Collector Current (IC): 150 A; Maximum Operating Temperature: 125 Cel; Maximum VCEsat: 1.8 V; Maximum Gate-Emitter Voltage: 20 V;
Datasheet MIXA100PM650TMI Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 150 A
Maximum Power Dissipation (Abs): 330 W
Maximum Collector-Emitter Voltage: 650 V
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 1.8 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

APTGLQ100DA120T1G by Microsemi

APTGLQ100DA120T1G

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; Maximum Collector Current (IC): 170 A; Maximum Gate-Emitter Voltage: 20 V;
IXGT30N120B3D1 by IXYS Corporation

IXGT30N120B3D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 30 A; Package Body Material: PLASTIC/EPOXY;
IXXN110N65C4H1 by Littelfuse

IXXN110N65C4H1

Littelfuse

IXXN110N65C4H1 by Littelfuse is an N-CHANNEL IGBT with 650V VCEsat, 210A IC, and 750W power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and operates b/w -55 to 175 °C.
HGTG30N60C3D by Intersil

HGTG30N60C3D

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Maximum Collector Current (IC): 63 A; Terminal Form: THROUGH-HOLE;
IRGPS40B120UPBF by International Rectifier

IRGPS40B120UPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 595 W; Maximum Collector Current (IC): 80 A; Nominal Turn On Time (ton): 115 ns;
FD16001200R17HP4B2BOSA2 by Infineon Technologies

FD16001200R17HP4B2BOSA2

Infineon Technologies

Infineon's FD16001200R17HP4B2BOSA2 IGBT features N-CHANNEL polarity, COMPLEX configuration, and 1700V max. collector-emitter voltage. Ideal for POWER CONTROL applications with 1710ns turn-off time and 650ns turn-on time. Package style is FLANGE MOUNT with 9 terminals in RECTANGULAR shape.
IXDR35N60BD1 by Littelfuse

IXDR35N60BD1

Littelfuse

IXDR35N60BD1 by Littelfuse is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 38A max collector current, and 390ns turn off time. Ideal for power control applications due to its single configuration with built-in diode and isolated case connection.
HGTG40N60B3 by Intersil

HGTG40N60B3

Intersil

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 70 A; Terminal Position: SINGLE;
SKB02N120ATMA1 by Infineon Technologies

SKB02N120ATMA1

Infineon Technologies

Infineon's SKB02N120ATMA1 is an N-CHANNEL IGBT with a 1200V max collector-emitter voltage and 6.2A max collector current. It has a built-in diode, 375ns turn-off time, and is ideal for power control applications requiring fast switching capabilities in surface-mount designs.
CM200TX-24T by Mitsubishi Electric

CM200TX-24T

Mitsubishi Electric

Mitsubishi Electric's CM200TX-24T is an N-CHANNEL IGBT with 1200V VCEsat, 200A IC, and 1040W power dissipation. Ideal for POWER CONTROL applications, it features a complex configuration in a rectangular package with 35 terminals. Operating b/w -40 to 150 °C, it offers fast rise/fall times of 200/500 ns.
FS75R12KS4BOSA1 by Infineon Technologies

FS75R12KS4BOSA1

Infineon Technologies

Infineon FS75R12KS4BOSA1 is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. Features include 1200V max collector-emitter voltage, 100A max collector current, and 390ns turn off time. Ideal for high-power applications requiring fast switching such as motor drives and inverters.
FS50R06W1E3B11BOMA1 by Infineon Technologies

FS50R06W1E3B11BOMA1

Infineon Technologies

Infineon FS50R06W1E3B11BOMA1 is a N-CHANNEL IGBT with 600V VCE, 70A IC, and 370ns toff. Ideal for POWER CONTROL applications due to its fast switching times and high current handling capabilities in a RECTANGULAR package.
IKD15N60RFATMA1 by Infineon Technologies

IKD15N60RFATMA1

Infineon Technologies

IKD15N60RFATMA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 30A IC, and 250W power dissipation. It operates up to 175°C making it suitable for high-power applications in industries like automotive and renewable energy.
FGH40N60SFDTU by Onsemi

FGH40N60SFDTU

Onsemi

FGH40N60SFDTU by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a 90ns fall time, 170ns turn off time, and can handle up to 290W power dissipation. Ideal for power control applications requiring high voltage and current handling capabilities.
HGTG10N120BND by Onsemi

HGTG10N120BND

Onsemi

HGTG10N120BND by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 35A max collector current. Ideal for motor control applications, it features a single configuration with built-in diode and a nominal turn off time of 330ns. Package style: Flange mount, terminal finish: Matte Tin, operating temp: 150°C.
IRG4BC30FDPBF by Infineon Technologies

IRG4BC30FDPBF

Infineon Technologies

IRG4BC30FDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a nominal turn-off time of 620ns and is designed for power control applications. With a max operating temperature of 150°C, it can handle up to 31A of collector current efficiently.
VS-GA200SA60UP by Vishay Intertechnology

VS-GA200SA60UP

Vishay Intertechnology

VS-GA200SA60UP by Vishay Intertechnology is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 200A max collector current. It has a single configuration for power control applications, featuring a rectangular package style with flange mount and isolated case connection. Nominal turn off time is 620ns and turn on time is 131ns, making it suitable for high-power switching needs.
MG400V1US51A by Mitsubishi Electric

MG400V1US51A

Mitsubishi Electric

The Mitsubishi Electric MG400V1US51A is an N-CHANNEL IGBT transistor with a max VCEsat of 4.5V and IC of 400A. Ideal for power control applications, it has a toff of 770ns and ton of 210ns. With a max operating temperature of 150°C, this UL RECOGNIZED component offers high power dissipation at 2750W in a RECTANGULAR package style.
IXBX75N170A by Littelfuse

IXBX75N170A

Littelfuse

IXBX75N170A by Littelfuse is an N-CHANNEL IGBT with 1700V VCE, 110A IC, and 1040W power dissipation. Ideal for POWER CONTROL applications due to its fast switching times (ton: 66ns, toff: 478ns) and low VCEsat of 6V. Suitable for high-power systems operating in a wide temperature range (-55°C to 150°C).
APT85GR120B2 by Microsemi

APT85GR120B2

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 962 W; Maximum Collector Current (IC): 170 A; Terminal Position: SINGLE;