Littelfuse - MIXA100PM650TMI

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MIXA100PM650TMI by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number MIXA100PM650TMI
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 330 W; Maximum Collector Current (IC): 150 A; Maximum Operating Temperature: 125 Cel; Maximum VCEsat: 1.8 V; Maximum Gate-Emitter Voltage: 20 V;
Datasheet MIXA100PM650TMI Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 150 A
Maximum Power Dissipation (Abs): 330 W
Maximum Collector-Emitter Voltage: 650 V
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 1.8 V
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