Littelfuse - MIXA40W200TED

  1. Home
  2. Littelfuse - MIXA40W200TED
MIXA40W200TED by Littelfuse

Image shown is a representation only.

Manufacturer Littelfuse
Manufacturer's Part Number MIXA40W200TED
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 195 W; Maximum Collector Current (IC): 55 A; Maximum VCEsat: 2.1 V; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet MIXA40W200TED Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 55 A
Maximum Power Dissipation (Abs): 195 W
Maximum Collector-Emitter Voltage: 1200 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 2.1 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

AIKW20N60CTXKSA1 by Infineon Technologies

AIKW20N60CTXKSA1

Infineon Technologies

Infineon's AIKW20N60CTXKSA1 is an N-CHANNEL IGBT with 600V VCEsat, 40A IC, and 2.05V VCE. Ideal for power control applications, it features a built-in diode and operates b/w -40 to 175°C.
IRG4BC20UD-STRR by International Rectifier

IRG4BC20UD-STRR

International Rectifier

IRG4BC20UD-STRR by International Rectifier is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 13A max collector current. It has a built-in diode, 170ns fall time, and 320ns turn off time. Ideal for power control applications requiring high power dissipation up to 60W in surface mount configurations.
NGTB03N60R2DT4G by Onsemi

NGTB03N60R2DT4G

Onsemi

NGTB03N60R2DT4G by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 9A, ideal for power control applications. It features a built-in diode, small outline package style, and can operate at temperatures up to 175°C. This transistor has a turn-off time of 105ns and is designed for surface mount assembly with gull wing terminals.
HGTG40N60B3 by Harris Semiconductor

HGTG40N60B3

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 70 A; Package Shape: RECTANGULAR;
AFGY100T65SPD by Onsemi

AFGY100T65SPD

Onsemi

AFGY100T65SPD by Onsemi is an N-CHANNEL IGBT with 650V VCEsat and 120A IC, ideal for POWER CONTROL applications. It features a max power dissipation of 882W, operating temperature range of -55 to 175°C, and built-in diode configuration.
ISL9V5036P3_F085 by Fairchild Semiconductor

ISL9V5036P3_F085

Fairchild Semiconductor

Fairchild Semiconductor's ISL9V5036P3_F085 is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 360V and Max Power Dissipation of 250W. It features a built-in diode and resistor, making it suitable for POWER CONTROL applications requiring fast switching times up to 7000ns rise time and 15000ns fall time.
ISL9V2040D3ST by Fairchild Semiconductor

ISL9V2040D3ST

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 10 A; No. of Terminals: 2;
IRG4PC50SPBF by International Rectifier

IRG4PC50SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; Maximum Collector-Emitter Voltage: 600 V;
IKW25N120H3 by Infineon Technologies

IKW25N120H3

Infineon Technologies

IKW25N120H3 by Infineon Technologies is a N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and max collector current of 50A. It is used for power control applications, offering a nominal turn-off time of 397ns and max power dissipation of 326W.
FP35R12KT4BOSA1 by Infineon Technologies

FP35R12KT4BOSA1

Infineon Technologies

FP35R12KT4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max voltage of 1200V, and turn-off time of 620ns. It is used in applications requiring high power switching capabilities at up to 150°C operating temperature. The transistor's silicon material and complex configuration make it suitable for various industrial uses.
IXGH32N170A by Littelfuse

IXGH32N170A

Littelfuse

IXGH32N170A by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 32A max collector current, and 370ns nominal turn-off time. Ideal for motor control applications due to its single configuration and flange mount package style.
CM900DU-24NF by Powerex

CM900DU-24NF

Powerex

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 900 A; Maximum Collector-Emitter Voltage: 1200 V; Transistor Element Material: SILICON;
FGA25N120ANTDTU-F109 by Onsemi

FGA25N120ANTDTU-F109

Onsemi

FGA25N120ANTDTU-F109 by Onsemi is an N-CHANNEL IGBT with 90 ns rise time, 180 ns fall time, and 312 W power dissipation. Ideal for high-power applications requiring a max collector-emitter voltage of 1200 V and a collector current of 50 A. Operating temperature up to 150°C makes it suitable for industrial use.
IRG7PH42UD1-EP by Infineon Technologies

IRG7PH42UD1-EP

Infineon Technologies

IRG7PH42UD1-EP by Infineon Technologies is an N-channel insulated gate bipolar transistor (IGBT) with a max collector-emitter voltage of 1200V. It has a max power dissipation of 313W and is designed for power control applications. The transistor has a rectangular package shape and a through-hole terminal form.
FGH40N60UFTU by Fairchild Semiconductor

FGH40N60UFTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Terminal Position: SINGLE;
FGH40N60SMD by Fairchild Semiconductor

FGH40N60SMD

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Collector Current (IC): 80 A; Terminal Position: SINGLE;
FPF2G120BF07ASP by Onsemi

FPF2G120BF07ASP

Onsemi

Onsemi's FPF2G120BF07ASP is an N-CHANNEL IGBT with 3 elements, diode, and thermistor. Ideal for power control applications with VCEsat of 2.2V, IC of 40A, and toff of 165ns. Operates at -40 to 150°C temperature range in a flange mount package style.
FF300R12MS4BOSA1 by Infineon Technologies

FF300R12MS4BOSA1

Infineon Technologies

FF300R12MS4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a max voltage of 1200V, and a current rating of 370A. It has a turn-off time of 590ns and a turn-on time of 180ns, making it suitable for high-power applications like industrial motor drives and renewable energy systems.
HGTG12N60A4D by Intersil

HGTG12N60A4D

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 54 A; Transistor Application: MOTOR CONTROL;
HGTD1N120BNS9A by Intersil

HGTD1N120BNS9A

Intersil

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 5.3 A; Transistor Element Material: SILICON;