Littelfuse - MWI75-12A8

MWI75-12A8 by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number MWI75-12A8
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 125 A; Maximum VCEsat: 2.6 V;
Datasheet MWI75-12A8 Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 125 A
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: MATTE TIN OVER NICKEL
Nominal Turn Off Time (toff): 700 ns
No. of Terminals: 33
Maximum Power Dissipation (Abs): 500 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 150 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X33
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 125 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Additional Features: ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 2.6 V
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