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| Manufacturer | Microchip Technology |
|---|---|
| Manufacturer's Part Number | APTC60AM18SCG |
| Description | N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Case Connection: ISOLATED; |
| Datasheet | APTC60AM18SCG Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Configuration: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 143 A |
| Maximum Pulsed Drain Current (IDM): | 572 A |
| Surface Mount: | NO |
| Terminal Finish: | TIN SILVER COPPER |
| No. of Terminals: | 7 |
| Terminal Position: | UPPER |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-XUFM-X7 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Maximum Drain-Source On Resistance: | .018 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 1800 mJ |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e1 |
| Minimum DS Breakdown Voltage: | 600 V |
| Qualification: | Not Qualified |
| Additional Features: | AVALANCHE RATED |
