Microchip Technology - APTM100UM65SAG

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APTM100UM65SAG by Microchip Technology

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Manufacturer Microchip Technology
Manufacturer's Part Number APTM100UM65SAG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: AVALANCHE RATED; Qualification: Not Qualified; No. of Terminals: 2;
Datasheet APTM100UM65SAG Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 145 A
Maximum Pulsed Drain Current (IDM): 580 A
Surface Mount: NO
Terminal Finish: TIN SILVER COPPER
No. of Terminals: 2
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .078 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 3200 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e1
Minimum DS Breakdown Voltage: 1000 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
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