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| Manufacturer | Microchip Technology |
|---|---|
| Manufacturer's Part Number | MSCSM120HM31CT3AG |
| Description | N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 395 W; Transistor Application: SWITCHING; Minimum Operating Temperature: -40 Cel; |
| Datasheet | MSCSM120HM31CT3AG Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Configuration: | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
| Transistor Element Material: | SILICON CARBIDE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 89 A |
| Maximum Pulsed Drain Current (IDM): | 180 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| Minimum Operating Temperature: | -40 Cel |
| No. of Terminals: | 25 |
| Minimum DS Breakdown Voltage: | 1200 V |
| Maximum Power Dissipation (Abs): | 395 W |
| Terminal Position: | UPPER |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-XUFM-X25 |
| No. of Elements: | 4 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain Current (Abs) (ID): | 89 A |
| Case Connection: | ISOLATED |
| Maximum Drain-Source On Resistance: | .031 ohm |
